WNM4002 PDF and Equivalents Search

 ..1. Size:160K  willsemi
 wnm4002.pdf

WNM4002 WNM4002 Small Signal N-Channel, 20V, 0.3A, MOSFET Http //www.willsemi.com Top V(BR)DSS RDS(on) Typ. D 3 1.4 @ 4.5V 20 V 2.2 @ 2.5V 1 2 3.8 @ 1.8V G S SOT-523 Descriptions D 3 The WNM4002 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is ... See More ⇒

 8.1. Size:179K  willsemi
 wnm4006.pdf

WNM4006 WNM4006 Http //www.sh-willsemi.com Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D The WNM4006 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is su... See More ⇒

 8.2. Size:113K  willsemi
 wnm4001.pdf

WNM4001 WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET Http //www.willsemi.com Top V(BR)DSS RDS(on) Max. ID MAX D 3 0.7 @ 4.5V 0.5A 20 V 0.85 @ 2.5V 0.3A 1 2 1.25 @ 1.8V 0.1A G S SOT-523 Descriptions D 3 The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge... See More ⇒

 8.3. Size:86K  tysemi
 wnm4006.pdf

Product specification WNM4006 Single N-Channel, 45V, 1.7A, Power MOSFET VDS (V) Rds(on) ( ) 0.126@ VGS=10V 0.142@ VGS=4.5V 45 0.147@ VGS=4.0V 0.208@ VGS=2.5V SOT-23 Descriptions D 3 The WNM4006 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use... See More ⇒