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WNM6001 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WNM6001
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.6 Ohm
   Paquete / Cubierta: SOT23
 

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WNM6001 Datasheet (PDF)

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WNM6001

WNM6001 WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-23 Descriptions The WNM6001 is N-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench 3 technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

 0.1. Size:579K  cn yenji elec
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WNM6001

YWNM6001SOT-23Small Signal MOSFET380 mAmps, 60 Volts NChannel 1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND ORDERING INFORMATION

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WNM6001

WNM6002W 2 WNM6002 Single N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () D1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM S GDescriptions SOT-323 The WNM6 is N-C enhancement M Field 6002 Channel MOS D Effect Transistor. Uses trench techns advanced t nology and 3 design to provide excellent RDS(ON) with low gaate cha

Otros transistores... WNM3008 , WNM3011 , WNM3013 , WNM3017 , WNM4001 , WNM4002 , WNM4006 , WNM4153 , AO4468 , WNMD2153 , WNMD2154 , WNMD2158 , WNMD2160 , WNMD2162 , WNMD2165 , WNMD2166 , WNMD2168 .

History: SI7322DN | NCEP040N85G | SNN3100L10Q | 2SK1589 | NP20P06SLG | JFPC2N80C | WMQ040N03LG2

 

 
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