WNM6001 Specs and Replacement
Type Designator: WNM6001
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.69 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: SOT23
WNM6001 substitution
- MOSFET ⓘ Cross-Reference Search
WNM6001 datasheet
wnm6001.pdf
WNM6001 WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM SOT-23 Descriptions The WNM6001 is N-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench 3 technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable ... See More ⇒
ywnm6001.pdf
YWNM6001 SOT-23 Small Signal MOSFET 380 mAmps, 60 Volts N Channel 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ESD Protected 2. DEVICE MARKING AND ORDERING INFORMATION... See More ⇒
wnm6002.pdf
WNM6002 W 2 WNM6002 Single N-Channel, 60V, 0.30A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) D 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM S G Descriptions SOT-323 The WNM6 is N-C enhancement M Field 6002 Channel MOS D Effect Transistor. Uses trench techn s advanced t nology and 3 design to provide excellent RDS(ON) with low ga ate cha... See More ⇒
Detailed specifications: WNM3008, WNM3011, WNM3013, WNM3017, WNM4001, WNM4002, WNM4006, WNM4153, 60N06, WNMD2153, WNMD2154, WNMD2158, WNMD2160, WNMD2162, WNMD2165, WNMD2166, WNMD2168
Keywords - WNM6001 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WNMD2165
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