WNM6001 Datasheet and Replacement. Cross Reference Search

WNM6001 Datasheet (PDF)

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WNM6001 WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-23 Descriptions The WNM6001 is N-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench 3 technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

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YWNM6001SOT-23Small Signal MOSFET380 mAmps, 60 Volts NChannel 1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND ORDERING INFORMATION

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WNM6002W 2 WNM6002 Single N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () D1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM S GDescriptions SOT-323 The WNM6 is N-C enhancement M Field 6002 Channel MOS D Effect Transistor. Uses trench techns advanced t nology and 3 design to provide excellent RDS(ON) with low gaate cha

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .