WNM6001 WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-23 Descriptions The WNM6001 is N-Channel enhancement D MOS Field Effect Transistor. Uses advanced trench 3 technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

YWNM6001SOT-23Small Signal MOSFET380 mAmps, 60 Volts NChannel 1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND ORDERING INFORMATION

WNM6002W 2 WNM6002 Single N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () D1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM S GDescriptions SOT-323 The WNM6 is N-C enhancement M Field 6002 Channel MOS D Effect Transistor. Uses trench techns advanced t nology and 3 design to provide excellent RDS(ON) with low gaate cha