2N7080 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N7080
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO254

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2N7080 Datasheet (PDF)

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2n7080.pdf

9.1. Size:285K rca
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2n7086.pdf

2N7086MECHANICAL DATADimensions in mm(inches)NCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS 200V1 2 3ID(A) 14ARDS(on) 0.160.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILI

9.5. Size:14K semelab
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2N7081220MISOMECHANICAL DATADimensions in mm(inches)NCHANNELPOWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)VDSS 100V3.56 (0.140)Dia.3.81 (0.150)ID(cont) 11ARDS(on) 0.151 2 3FEATURES TO220 ISOLATED HERMETIC PACKAGE LOW RDS(ON)0.64 (0.025)Dia.0.89 (0.035) SIMPLE DRIVE REQUIREMENTS

9.6. Size:16K semelab
2n7085.pdf

2N7085MECHANICAL DATADimensions in mm(inches)NCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS 100V1 2 3ID(A) 20ARDS(on) 0.0750.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILITY APPL

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