2N7080
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2N7080
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 9.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 30
nS
Cossⓘ -
Output Capacitance: 450
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5
Ohm
Package:
TO254
2N7080
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2N7080
Datasheet (PDF)
9.4. Size:14K semelab
2n7086.pdf 
2N7086MECHANICAL DATADimensions in mm(inches)NCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS 200V1 2 3ID(A) 14ARDS(on) 0.160.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILI
9.5. Size:14K semelab
2n7081-220m-iso 2n7081.pdf
2N7081220MISOMECHANICAL DATADimensions in mm(inches)NCHANNELPOWER MOSFET4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)1.14 (0.045)VDSS 100V3.56 (0.140)Dia.3.81 (0.150)ID(cont) 11ARDS(on) 0.151 2 3FEATURES TO220 ISOLATED HERMETIC PACKAGE LOW RDS(ON)0.64 (0.025)Dia.0.89 (0.035) SIMPLE DRIVE REQUIREMENTS
9.6. Size:16K semelab
2n7085.pdf
2N7085MECHANICAL DATADimensions in mm(inches)NCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS 100V1 2 3ID(A) 20ARDS(on) 0.0750.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILITY APPL
9.7. Size:215K temic
2n7089.pdf
"2N7089""2N7089""2N7089""2N7089"
Datasheet: 2N7072
, 2N7073
, 2N7074
, 2N7075
, 2N7076
, 2N7077
, 2N7078
, 2N7079
, IRF530
, 2N7081
, 2N7082
, 2N7085
, 2N7086
, 2N7100
, 2N7101
, 2N7102
, 2N7103
.
