WPM3407 Todos los transistores

 

WPM3407 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WPM3407
   Código: WP7*
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 18 nC
   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: SOT23
 

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WPM3407 Datasheet (PDF)

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WPM3407

WPM3407WPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETHttp://www.sh-willsemi.com DescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable foruse in DC-DC conversion applications. Standard Product3WPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V53 m @ -4.5

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WPM3407

Product specificationWPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETDescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable for3use in DC-DC conversion applications. Standard ProductWPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V pin connections : 53 m

 8.1. Size:2014K  willsemi
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WPM3407

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

 8.2. Size:439K  tysemi
 wpm3401.pdf pdf_icon

WPM3407

Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

MOSTRAR MÁS

Otros transistores... WPM2049 , WPM2065 , WPM2341 , WPM2341A , WPM3004 , WPM3005 , WPM3012 , WPM3401 , SPP20N60C3 , WPM4801 , WPM4803 , WPM5001 , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 .

History: IRFR310T

 

 
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