WPM3407 MOSFET Datasheet: P-Ch, 30V, 3.7A. Full specification with pinout and replacement list

WPM3407 Specs and Replacement

Type Designator: WPM3407

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SOT23

WPM3407 substitution

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WPM3407 datasheet

..1. Size:1489K willsemi
wpm3407.pdf pdf_icon

WPM3407 WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Http //www.sh-willsemi.com Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product 3 WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V 53 m @ -4.5... See More ⇒

..2. Size:689K tysemi
wpm3407.pdf pdf_icon

Product specification WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for 3 use in DC-DC conversion applications. Standard Product WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V pin connections 53 m ... See More ⇒

8.1. Size:2014K willsemi
wpm3401.pdf pdf_icon

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m ) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz... See More ⇒

8.2. Size:439K tysemi
wpm3401.pdf pdf_icon

Product specification WPM3401 P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co... See More ⇒

Detailed specifications: WPM2049, WPM2065, WPM2341, WPM2341A, WPM3004, WPM3005, WPM3012, WPM3401, K3569, WPM4801, WPM4803, WPM5001, WPM9435, WPMD2008, WPMD2010, WPMD2011, WPMD2012