Справочник MOSFET. WPM3407

 

WPM3407 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WPM3407
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для WPM3407

 

 

WPM3407 Datasheet (PDF)

 ..1. Size:1489K  willsemi
 wpm3407.pdf

WPM3407 WPM3407

WPM3407WPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETHttp://www.sh-willsemi.com DescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable foruse in DC-DC conversion applications. Standard Product3WPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V53 m @ -4.5

 ..2. Size:689K  tysemi
 wpm3407.pdf

WPM3407 WPM3407

Product specificationWPM3407Single P-Channel, -30 V, -4.4A,Power MOSFETDescriptionThe WPM3407 uses advanced trench technology to provideexcellent RDS(ON) with low gate charge. This device is suitable for3use in DC-DC conversion applications. Standard ProductWPM3407 is Pb-free.1Features2SOT 23-3V R Typ(BR)DSS DS(on)36 m @ -10 V-30 V pin connections : 53 m

 8.1. Size:2014K  willsemi
 wpm3401.pdf

WPM3407 WPM3407

WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

 8.2. Size:439K  tysemi
 wpm3401.pdf

WPM3407 WPM3407

Product specificationWPM3401P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

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