WPM3407 - аналоги, параметры транзистора - Справочник транзисторов

WPM3407 даташит

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WPM3407 WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Http //www.sh-willsemi.com Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product 3 WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V 53 m @ -4.5

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Product specification WPM3407 Single P-Channel, -30 V, -4.4A,Power MOSFET Description The WPM3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for 3 use in DC-DC conversion applications. Standard Product WPM3407 is Pb-free. 1 Features 2 SOT 23-3 V R Typ (BR)DSS DS(on) 36 m @ -10 V -30 V pin connections 53 m

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WPM3401 WPM3401 Single P-Channel, -30V, -4.6A, Power MOSFET www.sh-willsemi.com VDS (V) Max RDS (on) (m ) 53@ VGS=-10V -30 56@ VGS=-4.5V Descriptions SOT-23-3L The WPM3401 is the P-Channel logic enhancement D mode power field effect transistors are produced using 3 high cell density, DMOS trench technology. This high density process is especially tailored to minimiz

8.2. Size:439K tysemi
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Product specification WPM3401 P-Channel Enhancement Mode MOSFET Description The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook co

Другие MOSFET... WPM2049 , WPM2065 , WPM2341 , WPM2341A , WPM3004 , WPM3005 , WPM3012 , WPM3401 , K3569 , WPM4801 , WPM4803 , WPM5001 , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 .