WPM4801 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WPM4801
Código: WPM4801
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 5.6 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
Carga de la puerta (Qg): 10 nC
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: SOP8P
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WPM4801 Datasheet (PDF)
wpm4801.pdf
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WPM4801WPM4801P-Channel Enhancement Mode MOSFET www.willsemi.comDescriptionThe WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using PIN CONNECTIONShigh cell density , DMOS trench technology. This high density process is especially tailored to 1S1 8 D1minimize on-state resistance. G1 D1These devices are particularly s
wpm4803.pdf
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WPM4803WPM4803P-Channel Enhancement Mode MOSFET DescriptionThe WPM4803 is the Dual P-Channel logic enhancement www.willsemi.commode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONNECTIONS These devices are particularly suited for low volt
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