WPM4801 Todos los transistores

 

WPM4801 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WPM4801

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.6 A

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: SOP8P

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WPM4801 datasheet

 ..1. Size:857K  willsemi
 wpm4801.pdf pdf_icon

WPM4801

WPM4801 WPM4801 P-Channel Enhancement Mode MOSFET www.willsemi.com Description The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using PIN CONNECTIONS high cell density , DMOS trench technology. This high density process is especially tailored to 1 S1 8 D1 minimize on-state resistance. G1 D1 These devices are particularly s

 8.1. Size:764K  willsemi
 wpm4803.pdf pdf_icon

WPM4801

WPM4803 WPM4803 P-Channel Enhancement Mode MOSFET Description The WPM4803 is the Dual P-Channel logic enhancement www.willsemi.com mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONNECTIONS These devices are particularly suited for low volt

Otros transistores... WPM2065 , WPM2341 , WPM2341A , WPM3004 , WPM3005 , WPM3012 , WPM3401 , WPM3407 , IRFP260 , WPM4803 , WPM5001 , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 .

History: ZXMNS3BM832TA | CS460FA9H | AP4501GD | STF6N90K5 | STT3962N

 

 

 

 

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