WPM4801 Todos los transistores

 

WPM4801 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WPM4801
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.6 A

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOP8P
 

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WPM4801 Datasheet (PDF)

 ..1. Size:857K  willsemi
 wpm4801.pdf pdf_icon

WPM4801

WPM4801WPM4801P-Channel Enhancement Mode MOSFET www.willsemi.comDescriptionThe WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using PIN CONNECTIONShigh cell density , DMOS trench technology. This high density process is especially tailored to 1S1 8 D1minimize on-state resistance. G1 D1These devices are particularly s

 8.1. Size:764K  willsemi
 wpm4803.pdf pdf_icon

WPM4801

WPM4803WPM4803P-Channel Enhancement Mode MOSFET DescriptionThe WPM4803 is the Dual P-Channel logic enhancement www.willsemi.commode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONNECTIONS These devices are particularly suited for low volt

Otros transistores... WPM2065 , WPM2341 , WPM2341A , WPM3004 , WPM3005 , WPM3012 , WPM3401 , WPM3407 , 4435 , WPM4803 , WPM5001 , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 .

History: BSC152N10NSFG | BSC265N10LSFG

 

 
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