WPM4801
MOSFET. Datasheet pdf. Equivalent
Type Designator: WPM4801
Marking Code: WPM4801
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 5.6
A
Qgⓘ - Total Gate Charge: 10
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
SOP8P
WPM4801
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WPM4801
Datasheet (PDF)
..1. Size:857K willsemi
wpm4801.pdf
WPM4801WPM4801P-Channel Enhancement Mode MOSFET www.willsemi.comDescriptionThe WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using PIN CONNECTIONShigh cell density , DMOS trench technology. This high density process is especially tailored to 1S1 8 D1minimize on-state resistance. G1 D1These devices are particularly s
8.1. Size:764K willsemi
wpm4803.pdf
WPM4803WPM4803P-Channel Enhancement Mode MOSFET DescriptionThe WPM4803 is the Dual P-Channel logic enhancement www.willsemi.commode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONNECTIONS These devices are particularly suited for low volt
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