WPM4801 PDF and Equivalents Search

 

WPM4801 Specs and Replacement


   Type Designator: WPM4801
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOP8P
 

 WPM4801 substitution

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WPM4801 datasheet

 ..1. Size:857K  willsemi
wpm4801.pdf pdf_icon

WPM4801

WPM4801 WPM4801 P-Channel Enhancement Mode MOSFET www.willsemi.com Description The WPM4801is the Dual P-Channel logic enhancement mode power field effect transistors are produced using PIN CONNECTIONS high cell density , DMOS trench technology. This high density process is especially tailored to 1 S1 8 D1 minimize on-state resistance. G1 D1 These devices are particularly s... See More ⇒

 8.1. Size:764K  willsemi
wpm4803.pdf pdf_icon

WPM4801

WPM4803 WPM4803 P-Channel Enhancement Mode MOSFET Description The WPM4803 is the Dual P-Channel logic enhancement www.willsemi.com mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. PIN CONNECTIONS These devices are particularly suited for low volt... See More ⇒

Detailed specifications: WPM2065 , WPM2341 , WPM2341A , WPM3004 , WPM3005 , WPM3012 , WPM3401 , WPM3407 , IRFP260 , WPM4803 , WPM5001 , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 .

Keywords - WPM4801 MOSFET specs

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