BSS306N Todos los transistores

 ..1. Size:223K  infineon
 bss306n.pdf

BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Re

 ..2. Size:136K  tysemi
 bss306n.pdf

Product specification BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 T

 0.1. Size:328K  nxp
 pbss306nx.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.2. Size:175K  nxp
 pbss306nz.pdf

PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS306PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector

 0.3. Size:1654K  kexin
 pbss306nx.pdf

SMD Type Transistors NPN Transistors PBSS306NX (KBSS306NX) 1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 0.42 0.1 0.46 0.1 High efficiency due to less heat generation Complement to PBSS306PX. 1.Base C 2.Collector 3.Emitter B E Absolute