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BSS306N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSS306N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.3 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.057 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

BSS306N Datasheet (PDF)

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BSS306N

BSS306NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 57mDS(on),max GS Enhancement modeV =4.5 V 93GS Logic level (4.5V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape and Re

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BSS306N

Product specificationBSS306NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 57mDS(on),max GS Enhancement modeV =4.5 V 93GS Logic level (4.5V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112T

 0.1. Size:328K  nxp
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BSS306N

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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BSS306N

PBSS306NZ100 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS306PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H | CSD16410Q5A

 

 
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