BSS306N - описание и поиск аналогов

 

BSS306N. Аналоги и основные параметры

Наименование производителя: BSS306N

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.5 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 2.3 ns

Cossⓘ - Выходная емкость: 75 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm

Тип корпуса: SOT23

Аналог (замена) для BSS306N

- подборⓘ MOSFET транзистора по параметрам

 

BSS306N даташит

 ..1. Size:223K  infineon
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BSS306N

BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Re

 ..2. Size:136K  tysemi
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BSS306N

Product specification BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 T

 0.1. Size:328K  nxp
pbss306nx.pdfpdf_icon

BSS306N

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.2. Size:175K  nxp
pbss306nz.pdfpdf_icon

BSS306N

PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS306PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector

Другие MOSFET... WPMD2012 , WPMD2013 , WPMD3002 , BSR202N , BSR302N , BSR802N , BSS205N , BSS214N , AON7506 , BSS316N , BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L , DMN3110S , DMP1045U .

History: 3N80L-TM3-T | WMK043N10HGS | 2SK2223-01 | SMK0780FD | SM1F33PSU | WMK100N07TS | SL10N06A

 

 

 

 

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