BSS306N. Аналоги и основные параметры
Наименование производителя: BSS306N
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 0.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 2.3 ns
Cossⓘ - Выходная емкость: 75 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
Тип корпуса: SOT23
Аналог (замена) для BSS306N
- подборⓘ MOSFET транзистора по параметрам
BSS306N даташит
bss306n.pdf
BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Re
bss306n.pdf
Product specification BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 T
pbss306nx.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss306nz.pdf
PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS306PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector
Другие MOSFET... WPMD2012 , WPMD2013 , WPMD3002 , BSR202N , BSR302N , BSR802N , BSS205N , BSS214N , AON7506 , BSS316N , BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L , DMN3110S , DMP1045U .
History: 3N80L-TM3-T | WMK043N10HGS | 2SK2223-01 | SMK0780FD | SM1F33PSU | WMK100N07TS | SL10N06A
History: 3N80L-TM3-T | WMK043N10HGS | 2SK2223-01 | SMK0780FD | SM1F33PSU | WMK100N07TS | SL10N06A
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