BSS306N
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSS306N
Marking Code: SWs
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 2.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 2.3
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057
Ohm
Package:
SOT23
BSS306N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSS306N
Datasheet (PDF)
..1. Size:223K infineon
bss306n.pdf 
BSS306NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 57mDS(on),max GS Enhancement modeV =4.5 V 93GS Logic level (4.5V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape and Re
..2. Size:136K tysemi
bss306n.pdf
Product specificationBSS306NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 57mDS(on),max GS Enhancement modeV =4.5 V 93GS Logic level (4.5V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112T
0.1. Size:328K nxp
pbss306nx.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
0.2. Size:175K nxp
pbss306nz.pdf
PBSS306NZ100 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS306PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector
0.3. Size:1654K kexin
pbss306nx.pdf
SMD Type TransistorsNPN TransistorsPBSS306NX (KBSS306NX)1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC0.42 0.10.46 0.1 High efficiency due to less heat generation Complement to PBSS306PX.1.BaseC2.Collector3.EmitterBE Absolute
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