BSS316N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape and R

Product specificationBSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112

BSS316Nwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

BSS315P#

BSS314PE 9

Product specificationBSS315POptiMOS-P 2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =10 V 150mDS(on),max GSV =4.5 V 270 Enhancement modeGSI -1.5 ADLogic level (4.5V rated) Avalanche ratedPG-SOT-23 Qualified according to AEC Q1013100% lead-free; RoHS compliantHalogen-free according to AEC61249-2-211

Product specificationBSS314PEOptiMOS-P 3 Small-Signal-TransistorProduct Summary FeaturesVDS 30 V P-channelRDS(on),max VGS=-10 V 140 mW Enhancement modeVGS=-4.5 V 230 Logic level (4.5V rated)ID -1.5 A ESD protectedPG-SOT-23 Qualified according AEC Q1013 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-211 1