Справочник MOSFET. BSS316N

 

BSS316N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSS316N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 2.3 ns
   Cossⓘ - Выходная емкость: 26 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.16 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для BSS316N

 

 

BSS316N Datasheet (PDF)

 ..1. Size:231K  infineon
 bss316n.pdf

BSS316N BSS316N

BSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape and R

 ..2. Size:131K  tysemi
 bss316n.pdf

BSS316N BSS316N

Product specificationBSS316NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100%lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112

 ..3. Size:1723K  cn vbsemi
 bss316n.pdf

BSS316N BSS316N

BSS316Nwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

 9.1. Size:559K  infineon
 bss315p.pdf

BSS316N BSS316N

BSS315P#

 9.2. Size:488K  infineon
 bss314pe.pdf

BSS316N BSS316N

BSS314PE 9

 9.3. Size:126K  tysemi
 bss315p.pdf

BSS316N BSS316N

Product specificationBSS315POptiMOS-P 2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =10 V 150mDS(on),max GSV =4.5 V 270 Enhancement modeGSI -1.5 ADLogic level (4.5V rated) Avalanche ratedPG-SOT-23 Qualified according to AEC Q1013100% lead-free; RoHS compliantHalogen-free according to AEC61249-2-211

 9.4. Size:529K  tysemi
 bss314pe.pdf

BSS316N BSS316N

Product specificationBSS314PEOptiMOS-P 3 Small-Signal-TransistorProduct Summary FeaturesVDS 30 V P-channelRDS(on),max VGS=-10 V 140 mW Enhancement modeVGS=-4.5 V 230 Logic level (4.5V rated)ID -1.5 A ESD protectedPG-SOT-23 Qualified according AEC Q1013 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-211 1

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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