BSS316N Specs and Replacement
Type Designator: BSS316N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.3 nS
Cossⓘ - Output Capacitance: 26 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT23
BSS316N substitution
- MOSFET ⓘ Cross-Reference Search
BSS316N datasheet
bss316n.pdf
BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 160 m DS(on),max GS Enhancement mode V =4.5 V 280 GS Logic level (4.5V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100%lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and R... See More ⇒
bss316n.pdf
Product specification BSS316N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 160 m DS(on),max GS Enhancement mode V =4.5 V 280 GS Logic level (4.5V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100%lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 ... See More ⇒
bss316n.pdf
BSS316N www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G ... See More ⇒
Detailed specifications: WPMD2013, WPMD3002, BSR202N, BSR302N, BSR802N, BSS205N, BSS214N, BSS306N, STP80NF70, BSS806N, DMG2307L, DMG3401LSN, DMG3407SSN, DMN2041L, DMN3110S, DMP1045U, MGSF1N02LT1G
Keywords - BSS316N MOSFET specs
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