DMG3407SSN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMG3407SSN
   Código: G32
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.1 V
   Qgⓘ - Carga de la puerta: 10.6 nC
   trⓘ - Tiempo de subida: 12.9 nS
   Cossⓘ - Capacitancia de salida: 114 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET DMG3407SSN

DMG3407SSN Datasheet (PDF)

..1. Size:100K tysemi
dmg3407ssn.pdf

Product specificationDMG3407SSNP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.0A Low Input/Output Leakage -30V Lead-Free Finish; RoHS compliant (Note 1) 72m @ VGS = -4.5V -3.3A Halogen and Antimony Free.

8.1. Size:525K diodes
dmg3404l.pdf

DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 5.8A 25m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m @ VGS = 4.5V 4.8A Halogen and Antimony Free.

8.2. Size:281K diodes
dmg3402l.pdf

DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 52m @ VGS = 10V 4A Fast Switching Speed 30V 65m @ VGS = 4.5V 3A Low Input/Output Leakage 85m @ VGS = 2.5V 2A Totally Lead-Free & Fully RoHS Compliant (No

8.3. Size:617K diodes
dmg3406l.pdf

DMG3406L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 3.6A 50m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 2.8A Halogen and Antimony Free.

8.4. Size:186K diodes
dmg3401lsn.pdf

DMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (Note 3) 85m @ VGS =

8.5. Size:94K tysemi
dmg3401lsn.pdf

Product specificationDMG3401LSN30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(on) max Low On-ResistanceTA = 25C Low Input/Output Leakage 50m @ VGS = -10V -3.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -30V 60m @ VGS = -4.5V -3.3A Halogen and Antimony Free. Green Device (

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