DMG3407SSN - параметры транзистора MOSFET, его аналоги, datasheet

DMG3407SSN Datasheet (PDF)

..1. Size:100K tysemi
dmg3407ssn.pdf pdf_icon

Product specificationDMG3407SSNP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 50m @ VGS = -10V -4.0A Low Input/Output Leakage -30V Lead-Free Finish; RoHS compliant (Note 1) 72m @ VGS = -4.5V -3.3A Halogen and Antimony Free.

8.1. Size:525K diodes
dmg3404l.pdf pdf_icon

DMG3404L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 5.8A 25m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 35m @ VGS = 4.5V 4.8A Halogen and Antimony Free.

8.2. Size:281K diodes
dmg3402l.pdf pdf_icon

DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25C Low Input Capacitance 52m @ VGS = 10V 4A Fast Switching Speed 30V 65m @ VGS = 4.5V 3A Low Input/Output Leakage 85m @ VGS = 2.5V 2A Totally Lead-Free & Fully RoHS Compliant (No

8.3. Size:617K diodes
dmg3406l.pdf pdf_icon

DMG3406L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 3.6A 50m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 2.8A Halogen and Antimony Free.