DMG3407SSN MOSFET Datasheet: P-Ch, 30V, 4A. Full specification with pinout and replacement list

DMG3407SSN Specs and Replacement

Type Designator: DMG3407SSN

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.9 nS

Cossⓘ - Output Capacitance: 114 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

DMG3407SSN substitution

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DMG3407SSN datasheet

..1. Size:100K tysemi
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Product specification DMG3407SSN P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 50m @ VGS = -10V -4.0A Low Input/Output Leakage -30V Lead-Free Finish; RoHS compliant (Note 1) 72m @ VGS = -4.5V -3.3A Halogen and Antimony Free.... See More ⇒

8.1. Size:525K diodes
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8.2. Size:281K diodes
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DMG3402L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Low On-Resistance ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = +25 C Low Input Capacitance 52m @ VGS = 10V 4A Fast Switching Speed 30V 65m @ VGS = 4.5V 3A Low Input/Output Leakage 85m @ VGS = 2.5V 2A Totally Lead-Free & Fully RoHS Compliant (No... See More ⇒

8.3. Size:617K diodes
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