MGSF1N03LT1G Todos los transistores

 

MGSF1N03LT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MGSF1N03LT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.69 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1 nS
   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT23
 

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MGSF1N03LT1G Datasheet (PDF)

 3.1. Size:125K  motorola
 mgsf1n03lt1rev4.pdf pdf_icon

MGSF1N03LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N03LT1/DMGSF1N03LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energyconserving traits.These miniature surface mount MOSFETs utilize Motorola

 3.2. Size:69K  onsemi
 mgsf1n03lt1.pdf pdf_icon

MGSF1N03LT1G

MGSF1N03LT1Preferred DevicePower MOSFET30 V, 2.1 A, Single N-Channel, SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalhttp://onsemi.comhttp://onsemi.comapplications are dc-dc converters and power management in portableand battery-power

 5.1. Size:127K  onsemi
 mgsf1n03l mvgsf1n03l.pdf pdf_icon

MGSF1N03LT1G

MGSF1N03L, MVGSF1N03LMOSFET Single,N-Channel, SOT-2330 V, 2.1 AThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealwww.onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dc-dc converters and power management in portableV(BR)DSS RDS(on) TYP ID MAXand battery-powered

 5.2. Size:109K  tysemi
 mgsf1n03l mvgsf1n03l.pdf pdf_icon

MGSF1N03LT1G

Product specificationMGSF1N03L, MVGSF1N03LPower MOSFETV(BR)DSS RDS(on) TYP ID MAX30 V, 2.1 A, Single N-Channel, SOT-2380 mW @ 10 V30 V 2.1 AThese miniature surface mount MOSFETs low RDS(on) assure125 mW @ 4.5 Vminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalN-Channelapplications are dc-dc con

MOSTRAR MÁS

Otros transistores... BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L , DMN3110S , DMP1045U , MGSF1N02LT1G , STP80NF70 , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN .

History: SMN0250F | RU30J30M3 | HSM1562 | SLP10N70C | SWD9N10V1 | FDC2512F095 | NCE4090K

 

 
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