All MOSFET. MGSF1N03LT1G Datasheet

 

MGSF1N03LT1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: MGSF1N03LT1G
   Marking Code: N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23

 MGSF1N03LT1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MGSF1N03LT1G Datasheet (PDF)

 3.1. Size:125K  motorola
 mgsf1n03lt1rev4.pdf

MGSF1N03LT1G MGSF1N03LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N03LT1/DMGSF1N03LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energyconserving traits.These miniature surface mount MOSFETs utilize Motorola

 3.2. Size:69K  onsemi
 mgsf1n03lt1.pdf

MGSF1N03LT1G MGSF1N03LT1G

MGSF1N03LT1Preferred DevicePower MOSFET30 V, 2.1 A, Single N-Channel, SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalhttp://onsemi.comhttp://onsemi.comapplications are dc-dc converters and power management in portableand battery-power

 5.1. Size:127K  onsemi
 mgsf1n03l mvgsf1n03l.pdf

MGSF1N03LT1G MGSF1N03LT1G

MGSF1N03L, MVGSF1N03LMOSFET Single,N-Channel, SOT-2330 V, 2.1 AThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealwww.onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dc-dc converters and power management in portableV(BR)DSS RDS(on) TYP ID MAXand battery-powered

 5.2. Size:109K  tysemi
 mgsf1n03l mvgsf1n03l.pdf

MGSF1N03LT1G MGSF1N03LT1G

Product specificationMGSF1N03L, MVGSF1N03LPower MOSFETV(BR)DSS RDS(on) TYP ID MAX30 V, 2.1 A, Single N-Channel, SOT-2380 mW @ 10 V30 V 2.1 AThese miniature surface mount MOSFETs low RDS(on) assure125 mW @ 4.5 Vminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalN-Channelapplications are dc-dc con

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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