All MOSFET. MGSF1N03LT1G Datasheet

 

MGSF1N03LT1G Datasheet and Replacement


   Type Designator: MGSF1N03LT1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 2.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
      - MOSFET Cross-Reference Search

 

MGSF1N03LT1G Datasheet (PDF)

 3.1. Size:125K  motorola
mgsf1n03lt1rev4.pdf pdf_icon

MGSF1N03LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N03LT1/DMGSF1N03LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energyconserving traits.These miniature surface mount MOSFETs utilize Motorola

 3.2. Size:69K  onsemi
mgsf1n03lt1.pdf pdf_icon

MGSF1N03LT1G

MGSF1N03LT1Preferred DevicePower MOSFET30 V, 2.1 A, Single N-Channel, SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalhttp://onsemi.comhttp://onsemi.comapplications are dc-dc converters and power management in portableand battery-power

 5.1. Size:127K  onsemi
mgsf1n03l mvgsf1n03l.pdf pdf_icon

MGSF1N03LT1G

MGSF1N03L, MVGSF1N03LMOSFET Single,N-Channel, SOT-2330 V, 2.1 AThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealwww.onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dc-dc converters and power management in portableV(BR)DSS RDS(on) TYP ID MAXand battery-powered

 5.2. Size:109K  tysemi
mgsf1n03l mvgsf1n03l.pdf pdf_icon

MGSF1N03LT1G

Product specificationMGSF1N03L, MVGSF1N03LPower MOSFETV(BR)DSS RDS(on) TYP ID MAX30 V, 2.1 A, Single N-Channel, SOT-2380 mW @ 10 V30 V 2.1 AThese miniature surface mount MOSFETs low RDS(on) assure125 mW @ 4.5 Vminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalN-Channelapplications are dc-dc con

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: GSM3452 | PDC2603Z | AP3P7R0EMT | 2SK1496-Z | PV537BA | 12N80L-TF3-T | KF4N60D

Keywords - MGSF1N03LT1G MOSFET datasheet

 MGSF1N03LT1G cross reference
 MGSF1N03LT1G equivalent finder
 MGSF1N03LT1G lookup
 MGSF1N03LT1G substitution
 MGSF1N03LT1G replacement

 

 
Back to Top

 


 
.