MGSF1N03LT1G - Даташиты. Аналоги. Основные параметры
Наименование производителя: MGSF1N03LT1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.69 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 1 ns
Cossⓘ - Выходная емкость: 100 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: SOT23
Аналог (замена) для MGSF1N03LT1G
MGSF1N03LT1G Datasheet (PDF)
mgsf1n03lt1rev4.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MGSF1N03LT1/DMGSF1N03LT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energyconserving traits.These miniature surface mount MOSFETs utilize Motorola
mgsf1n03lt1.pdf

MGSF1N03LT1Preferred DevicePower MOSFET30 V, 2.1 A, Single N-Channel, SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalhttp://onsemi.comhttp://onsemi.comapplications are dc-dc converters and power management in portableand battery-power
mgsf1n03l mvgsf1n03l.pdf

MGSF1N03L, MVGSF1N03LMOSFET Single,N-Channel, SOT-2330 V, 2.1 AThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealwww.onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dc-dc converters and power management in portableV(BR)DSS RDS(on) TYP ID MAXand battery-powered
mgsf1n03l mvgsf1n03l.pdf

Product specificationMGSF1N03L, MVGSF1N03LPower MOSFETV(BR)DSS RDS(on) TYP ID MAX30 V, 2.1 A, Single N-Channel, SOT-2380 mW @ 10 V30 V 2.1 AThese miniature surface mount MOSFETs low RDS(on) assure125 mW @ 4.5 Vminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. TypicalN-Channelapplications are dc-dc con
Другие MOSFET... BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN , DMN2041L , DMN3110S , DMP1045U , MGSF1N02LT1G , 75N75 , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN .
History: 4N65KG-T2Q-R | AOSX32128 | JMSH0606PGDQ | WMJ36N60C4 | AONP38324 | BSB053N03LPG | AO3401MI-MS
History: 4N65KG-T2Q-R | AOSX32128 | JMSH0606PGDQ | WMJ36N60C4 | AONP38324 | BSB053N03LPG | AO3401MI-MS



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