IRF620A
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF620A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 47
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 200
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 12
nC
trⓘ - Tiempo de subida: 11
nS
Cossⓘ - Capacitancia
de salida: 55
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8
Ohm
Paquete / Cubierta:
TO220
Búsqueda de reemplazo de MOSFET IRF620A
IRF620A
Datasheet (PDF)
..1. Size:931K samsung
irf620a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
8.1. Size:881K 1
irf620b irfs620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
8.3. Size:162K international rectifier
irf620spbf.pdf
IRF620S, SiHF620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt RatingQgs (nC) 3.0 Repetitive Avalanche RatedQgd (nC) 7.9 Fast Switching Simple Drive RequirementsConfiguratio
8.4. Size:886K international rectifier
irf620.pdf
PD - 94870IRF620PbF Lead-Free12/5/03Document Number: 91027 www.vishay.com1IRF620PbFDocument Number: 91027 www.vishay.com2IRF620PbFDocument Number: 91027 www.vishay.com3IRF620PbFDocument Number: 91027 www.vishay.com4IRF620PbFDocument Number: 91027 www.vishay.com5IRF620PbFDocument Number: 91027 www.vishay.com6IRF620PbFTO-220AB Package Outline
8.5. Size:247K international rectifier
irf6201pbf.pdf
PD - 97500AIRF6201PbFHEXFET Power MOSFETVDS20 VRDS(on) max 2.45 m (@VGS = 4.5V)RDS(on) max 2.75 m(@VGS = 2.5V)Qg (typical)130 nC SO-8ID 27 A(@TA = 25C)Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switchFeatures and BenefitsFeatures BenefitsLow RDSon ( 2.45m @ Vgs = 4.5V) Lower
8.6. Size:873K international rectifier
irf620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
8.7. Size:202K international rectifier
irf620pbf.pdf
IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
8.8. Size:184K st
irf620.pdf
IRF620IRF620FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF620 200 V
8.10. Size:875K fairchild semi
irf620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
8.11. Size:152K vishay
irf620 sihf620.pdf
IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
Otros transistores... IRF611
, IRF612
, IRF613
, IRF614
, IRF614A
, IRF614S
, IRF615
, IRF620
, IRFP450
, IRF620FI
, IRF620S
, IRF621
, IRF6215
, IRF6215L
, IRF6215S
, IRF622
, IRF623
.
