IRF620A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF620A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
IRF620A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF620A Datasheet (PDF)
irf620a.pdf
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
irf620b irfs620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf620spbf.pdf
IRF620S, SiHF620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt RatingQgs (nC) 3.0 Repetitive Avalanche RatedQgd (nC) 7.9 Fast Switching Simple Drive RequirementsConfiguratio
irf620.pdf
PD - 94870IRF620PbF Lead-Free12/5/03Document Number: 91027 www.vishay.com1IRF620PbFDocument Number: 91027 www.vishay.com2IRF620PbFDocument Number: 91027 www.vishay.com3IRF620PbFDocument Number: 91027 www.vishay.com4IRF620PbFDocument Number: 91027 www.vishay.com5IRF620PbFDocument Number: 91027 www.vishay.com6IRF620PbFTO-220AB Package Outline
irf6201pbf.pdf
PD - 97500AIRF6201PbFHEXFET Power MOSFETVDS20 VRDS(on) max 2.45 m (@VGS = 4.5V)RDS(on) max 2.75 m(@VGS = 2.5V)Qg (typical)130 nC SO-8ID 27 A(@TA = 25C)Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switchFeatures and BenefitsFeatures BenefitsLow RDSon ( 2.45m @ Vgs = 4.5V) Lower
irf620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf620pbf.pdf
IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
irf620.pdf
IRF620IRF620FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF620 200 V
irf620b.pdf
November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to
irf620 sihf620.pdf
IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD
Datasheet: IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , IRF614S , IRF615 , IRF620 , STP80NF70 , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , IRF623 .
LIST
Last Update
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F