VBA1158N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VBA1158N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 28.5 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET VBA1158N

VBA1158N Datasheet (PDF)

..1. Size:469K cn vbsemi
vba1158n.pdf

VBA1158Nwww.VBsemi.comN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses150 23 nC0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

9.1. Size:128K onsemi
nsvba114ydxv6t1g.pdf

MUN5114DW1,NSBA114YDXV6,NSBA114YDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

9.2. Size:89K onsemi
nsvba114edxv6t1g.pdf

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

9.3. Size:879K cn vbsemi
vba1101m.pdf

VBA1101Mwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () 100 % UIS TestedID (A)d Qg (Typ.)0.124 at VGS = 10 V 4.2100 4.6 nC0.128 at VGS = 4.5 V APPLICATIONS3.9 High Frequency Boost Converter LED Backlight for LCD TVSO-8 DS D1 8S D2 7 DS 3 6 GG D4 5 Top ViewSN-Ch

9.4. Size:436K cn vbsemi
vba1104n.pdf

VBA1104Nwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses100 23 nC0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATIONSSO

9.5. Size:803K cn vbsemi
vba1101n.pdf

VBA1101Nwww.VBsemi.comN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0090 at VGS = 10 V 16 Material categorization:100 0.0105 at VGS = 7.5 V 15.2 27.9 nCAPPLICATIONS0.0120 at VGS = 6.0 V 14 DC/DC Primary Side Switch Telecom/ServerD Motor D

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