VBA1158N Specs and Replacement
Type Designator: VBA1158N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SO8
VBA1158N substitution
- MOSFET ⓘ Cross-Reference Search
VBA1158N datasheet
vba1158n.pdf
VBA1158N www.VBsemi.com N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.080 at VGS = 10 V 5.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.085 at VGS = 8 V 4.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO... See More ⇒
nsvba114ydxv6t1g.pdf
MUN5114DW1, NSBA114YDXV6, NSBA114YDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single R1 R2 device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor wit... See More ⇒
nsvba114edxv6t1g.pdf
MUN5111DW1, NSBA114EDXV6, NSBA114EDP6 Dual PNP Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit... See More ⇒
vba1101m.pdf
VBA1101M www.VBsemi.com N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) 100 % UIS Tested ID (A)d Qg (Typ.) 0.124 at VGS = 10 V 4.2 100 4.6 nC 0.128 at VGS = 4.5 V APPLICATIONS 3.9 High Frequency Boost Converter LED Backlight for LCD TV SO-8 D S D 1 8 S D 2 7 D S 3 6 G G D 4 5 Top View S N-Ch... See More ⇒
Detailed specifications: CS13N50FA9R, CS5N60A8H, VBA2216, CS15N50A8R, CS15N50FA9R, VBA1328, CS16N60FA9H, VBA1104N, IRF540N, VBA1101M, CS5N60A4H, CS55N06A4, VB2355, VB264K, VB1695, VB2103K, SI2318CDS-T1-GE3
Keywords - VBA1158N MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPAW60R380CE
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