CS20N50_ANH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS20N50_ANH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 230 W
Tensión drenaje-fuente |Vds|: 500 V
Tensión compuerta-fuente |Vgs|: 30 V
Corriente continua de drenaje |Id|: 20 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 75 nS
Conductancia de drenaje-sustrato (Cd): 285 pF
Resistencia drenaje-fuente RDS(on): 0.3 Ohm
Empaquetado / Estuche: TO3PN
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CS20N50_ANH Datasheet (PDF)
0.1. cs20n50 anh.pdf 
Size:363K _crhj
Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
5.1. cs20n50 a8h.pdf Size:352K _crhj
Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
7.1. cs20n50anh.pdf Size:363K _wuxi_china
Silicon N-Channel Power MOSFET R CS20N50 ANH General Description VDSS 500 V CS20N50 ANH, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
7.2. cs20n50a8h.pdf Size:352K _wuxi_china
Silicon N-Channel Power MOSFET R CS20N50 A8H General Description VDSS 500 V CS20N50 A8H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 230 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
