VB2290 MOSFET Datasheet: P-Ch, 20V, 3.5A. Full specification with pinout and replacement list

VB2290 Specs and Replacement

Type Designator: VB2290

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT23

VB2290 substitution

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VB2290 datasheet

..1. Size:563K cn vbsemi
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VB2290 www.VBsemi.com P-Channel 20 V (D-S) 175 C MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) - 20 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.075 100 % Rg and UIS Tested RDS(on) ( ) at VGS = - 2.5 V 0.080 Compliant to RoHS Directive 2002/95/EC ID (A) - 3.5 Configuration Single S (SOT-23) G 1 G ... See More ⇒

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vb2290a.pdf pdf_icon

VB2290A www.VBsemi.com P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.047 at VGS = - 10 V - 4.0 TrenchFET Power MOSFET - 20 0.060 at VGS = - 4.5 V - 3.8 8 nC 100 % Rg Tested 0.089 at VGS = - 2.5 V - 3.0 Compliant to RoHS Directive 2002/95/EC S TO-236 (... See More ⇒

Detailed specifications: SI2318DS-T1-GE3, SI2319CDS-T1-GE3, SI2319DS-T1-GE3, SI2323CDS-T1-GE3, SI2323DDS-T1-GE3, SI2323DS-T1, SI2338DS-T1-GE3, CS4N80FA9HD, 2N7000, CS4N80A4HD-G, VB8338, CS4N80A3HD-G, CS4N70FA9R, VBA1615, VBA1630, CS24N40FA9H, CS24N50ANHD