All MOSFET. VB2290 Datasheet

 

VB2290 Datasheet and Replacement


   Type Designator: VB2290
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23
 

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VB2290 Datasheet (PDF)

 ..1. Size:563K  cn vbsemi
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VB2290

VB2290www.VBsemi.comP-Channel 20 V (D-S) 175 C MOSFETFEATURES Halogen-free According to IEC 61249-2-21PRODUCT SUMMARYDefinitionVDS (V) - 20 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.075 100 % Rg and UIS TestedRDS(on) () at VGS = - 2.5 V 0.080 Compliant to RoHS Directive 2002/95/ECID (A) - 3.5Configuration SingleS(SOT-23)G 1 G

 0.1. Size:977K  cn vbsemi
 vb2290a.pdf pdf_icon

VB2290

VB2290Awww.VBsemi.comP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.047 at VGS = - 10 V - 4.0 TrenchFET Power MOSFET- 20 0.060 at VGS = - 4.5 V - 3.8 8 nC 100 % Rg Tested0.089 at VGS = - 2.5 V - 3.0 Compliant to RoHS Directive 2002/95/ECSTO-236(

Datasheet: SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , SI2323DS-T1 , SI2338DS-T1-GE3 , CS4N80FA9HD , IRF9540 , CS4N80A4HD-G , VB8338 , CS4N80A3HD-G , CS4N70FA9R , VBA1615 , VBA1630 , CS24N40FA9H , CS24N50ANHD .

History: RUH1H300T | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36

Keywords - VB2290 MOSFET datasheet

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