SI2369DS-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SI2369DS-T1 Datasheet (PDF)

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SI2369DS-T1www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT

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SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23-3Unit: mm+0.22.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V)1 2 RDS(ON) 40m (VGS =-4.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.21. Gate2. Source3. Drain Absolute Maximum Rating

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Si2369DSVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Material categorization:0.029 at VGS = - 10 V - 7.6For definitions of compliance please see0.034 at VGS = - 6 V - 7 11.4 nC- 30 www.vishay.com/doc?999120.040 at VGS = - 4.5 V - 6.5APPLICATIONS

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SMD Type MOSFETP-Channel MOSFET SI2369DS (KI2369DS)SOT-23Unit: mm Features+0.12.9 -0.1+0.10.4 -0.1 VDS (V) =-30V3 ID =-7.6A (VGS =20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) RDS(ON) 40m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta

Otros transistores... VBA1630 , CS24N40FA9H , CS24N50ANHD , CS25N06B3 , CS25N06B4 , CS25N06B8 , CS4N65FA9HD , CS4N65A3HD1-G , AO3400 , SI2399CDS-T1 , CS460FA9H , SI3407DV-T1 , SI3456DDV-T1 , SI3460DV-T1 , SI3477DV-T1-GE3 , SI3585DV-T1 , CS2N70A3R1-G .