SI2369DS-T1 PDF and Equivalents Search

 

SI2369DS-T1 Specs and Replacement

Type Designator: SI2369DS-T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

SI2369DS-T1 substitution

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SI2369DS-T1 datasheet

 ..1. Size:905K  cn vbsemi
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SI2369DS-T1

SI2369DS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT... See More ⇒

 5.1. Size:2183K  kexin
si2369ds-3.pdf pdf_icon

SI2369DS-T1

SMD Type MOSFET P-Channel MOSFET SI2369DS (KI2369DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 ID =-7.6A (VGS = 20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) 1 2 RDS(ON) 40m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Rating... See More ⇒

 6.1. Size:237K  vishay
si2369ds.pdf pdf_icon

SI2369DS-T1

Si2369DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Material categorization 0.029 at VGS = - 10 V - 7.6 For definitions of compliance please see 0.034 at VGS = - 6 V - 7 11.4 nC - 30 www.vishay.com/doc?99912 0.040 at VGS = - 4.5 V - 6.5 APPLICATIONS ... See More ⇒

 6.2. Size:2172K  kexin
si2369ds.pdf pdf_icon

SI2369DS-T1

SMD Type MOSFET P-Channel MOSFET SI2369DS (KI2369DS) SOT-23 Unit mm Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 VDS (V) =-30V 3 ID =-7.6A (VGS = 20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) RDS(ON) 40m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta... See More ⇒

Detailed specifications: VBA1630, CS24N40FA9H, CS24N50ANHD, CS25N06B3, CS25N06B4, CS25N06B8, CS4N65FA9HD, CS4N65A3HD1-G, AO3401, SI2399CDS-T1, CS460FA9H, SI3407DV-T1, SI3456DDV-T1, SI3460DV-T1, SI3477DV-T1-GE3, SI3585DV-T1, CS2N70A3R1-G

Keywords - SI2369DS-T1 MOSFET specs

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