SI2369DS-T1 - аналоги, параметры транзистора - Справочник транзисторов

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SI2369DS-T1 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT

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SMD Type MOSFET P-Channel MOSFET SI2369DS (KI2369DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-30V 3 ID =-7.6A (VGS = 20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) 1 2 RDS(ON) 40m (VGS =-4.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Rating

6.1. Size:237K vishay
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Si2369DS Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Material categorization 0.029 at VGS = - 10 V - 7.6 For definitions of compliance please see 0.034 at VGS = - 6 V - 7 11.4 nC - 30 www.vishay.com/doc?99912 0.040 at VGS = - 4.5 V - 6.5 APPLICATIONS

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SMD Type MOSFET P-Channel MOSFET SI2369DS (KI2369DS) SOT-23 Unit mm Features +0.1 2.9 -0.1 +0.1 0.4 -0.1 VDS (V) =-30V 3 ID =-7.6A (VGS = 20V) RDS(ON) 29m (VGS =-10V) RDS(ON) 34m (VGS =-6V) RDS(ON) 40m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta

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