IRF634A Todos los transistores

 ..1. Size:790K  samsung
 irf634a.pdf

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

 8.1. Size:301K  1
 irf634 irf635.pdf

 8.2. Size:171K  international rectifier
 irf634.pdf

 8.3. Size:2141K  international rectifier
 irf634pbf.pdf

PD - 94975 IRF634PbF Lead-Free 02/03/04 Document Number 91034 www.vishay.com 1 IRF634PbF Document Number 91034 www.vishay.com 2 IRF634PbF Document Number 91034 www.vishay.com 3 IRF634PbF Document Number 91034 www.vishay.com 4 IRF634PbF Document Number 91034 www.vishay.com 5 IRF634PbF Document Number 91034 www.vishay.com 6 IRF634PbF TO-220AB Package Outline

 8.4. Size:324K  international rectifier
 irf634s.pdf

PD - 95541 IRF634SPbF Lead-Free SMD-220 7/21/04 Document Number 91035 www.vishay.com 1 IRF634SPbF Document Number 91035 www.vishay.com 2 IRF634SPbF Document Number 91035 www.vishay.com 3 IRF634SPbF Document Number 91035 www.vishay.com 4 IRF634SPbF Document Number 91035 www.vishay.com 5 IRF634SPbF Document Number 91035 www.vishay.com 6 IRF634SPbF Peak Diode

 8.5. Size:244K  international rectifier
 irf634n-s-lpbf.pdf

PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435 G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rect

 8.6. Size:301K  international rectifier
 irf634n.pdf

PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175 C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435 Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processin

 8.7. Size:643K  fairchild semi
 irf634b.pdf

December 2013 IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 m Description Features These N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 29 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF) been especially tailored to

 8.8. Size:859K  fairchild semi
 irf634b irfs634b.pdf

 8.9. Size:153K  vishay
 irf634pbf sihf634.pdf

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 8.10. Size:158K  vishay
 irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC

 8.11. Size:125K  vishay
 irf634nlpbf irf634nspbf.pdf

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Available Dynamic dV/dt Rating RoHS* RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 34 Fast Switching Qgs (nC) 6.5 Fully Avalanche Rated Ease of Paralleling Qgd (nC

 8.12. Size:201K  vishay
 irf634 sihf634.pdf

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

 8.13. Size:168K  vishay
 irf634s sihf634s.pdf

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing

 8.14. Size:193K  vishay
 irf634spbf sihf634s.pdf

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing

 8.15. Size:199K  no
 irf634-35-36-37.pdf

 8.16. Size:114K  inchange semiconductor
 irf634.pdf

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features 1 2 3 With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON) 0.45 ;ID=8.1A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 250 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25