All MOSFET. IRF634A Datasheet

 

IRF634A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF634A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

IRF634A Datasheet (PDF)

 ..1. Size:790K  samsung
irf634a.pdf pdf_icon

IRF634A
IRF634A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

 8.1. Size:301K  1
irf634 irf635.pdf pdf_icon

IRF634A
IRF634A

 8.2. Size:171K  international rectifier
irf634.pdf pdf_icon

IRF634A
IRF634A

 8.3. Size:2141K  international rectifier
irf634pbf.pdf pdf_icon

IRF634A
IRF634A

PD - 94975IRF634PbF Lead-Free02/03/04Document Number: 91034 www.vishay.com1IRF634PbFDocument Number: 91034 www.vishay.com2IRF634PbFDocument Number: 91034 www.vishay.com3IRF634PbFDocument Number: 91034 www.vishay.com4IRF634PbFDocument Number: 91034 www.vishay.com5IRF634PbFDocument Number: 91034 www.vishay.com6IRF634PbFTO-220AB Package Outline

Datasheet: IRF630 , IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 , IRF633 , IRF634 , NCEP15T14 , IRF634S , IRF635 , IRF636A , IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S .

 

 
Back to Top