IRF634A - описание и поиск аналогов

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 250V Lower RDS(ON) 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

PD - 94975 IRF634PbF Lead-Free 02/03/04 Document Number 91034 www.vishay.com 1 IRF634PbF Document Number 91034 www.vishay.com 2 IRF634PbF Document Number 91034 www.vishay.com 3 IRF634PbF Document Number 91034 www.vishay.com 4 IRF634PbF Document Number 91034 www.vishay.com 5 IRF634PbF Document Number 91034 www.vishay.com 6 IRF634PbF TO-220AB Package Outline

PD - 95541 IRF634SPbF Lead-Free SMD-220 7/21/04 Document Number 91035 www.vishay.com 1 IRF634SPbF Document Number 91035 www.vishay.com 2 IRF634SPbF Document Number 91035 www.vishay.com 3 IRF634SPbF Document Number 91035 www.vishay.com 4 IRF634SPbF Document Number 91035 www.vishay.com 5 IRF634SPbF Document Number 91035 www.vishay.com 6 IRF634SPbF Peak Diode

PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435 G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rect

PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175 C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435 Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processin

December 2013 IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 m Description Features These N-Channel enhancement mode power field effect 8.1 A, 250 V, RDS(on) = 450 m @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low Gate Charge (Typ. 29 nC) planar, DMOS technology. This advanced technology has Low Crss (Typ. 20 pF) been especially tailored to

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Available Dynamic dV/dt Rating RoHS* RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 34 Fast Switching Qgs (nC) 6.5 Fully Avalanche Rated Ease of Paralleling Qgd (nC

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D D

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) ( )VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Sing

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features 1 2 3 With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON) 0.45 ;ID=8.1A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 250 V VGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25