CS5N20A3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS5N20A3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 52 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Paquete / Cubierta: TO251
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CS5N20A3 Datasheet (PDF)
cs5n20a3.pdf
Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs5n20a4.pdf
Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs5n20 a3.pdf
Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs5n20 a4.pdf
Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
cs5n20f a9.pdf
Silicon N-Channel Power MOSFET R CS5N20F A9 General Description VDSS 200 V CS5N20F A9, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 20 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918