All MOSFET. CS5N20A3 Datasheet

 

CS5N20A3 Datasheet and Replacement


   Type Designator: CS5N20A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO251
 

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CS5N20A3 Datasheet (PDF)

 ..1. Size:621K  wuxi china
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CS5N20A3

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 7.1. Size:739K  wuxi china
 cs5n20a4.pdf pdf_icon

CS5N20A3

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 8.1. Size:624K  crhj
 cs5n20 a3.pdf pdf_icon

CS5N20A3

Silicon N-Channel Power MOSFET R CS5N20 A3 General Description VDSS 200 V CS5N20 A3, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.2. Size:615K  crhj
 cs5n20 a4.pdf pdf_icon

CS5N20A3

Silicon N-Channel Power MOSFET R CS5N20 A4 General Description VDSS 200 V CS5N20 A4, the silicon N-channel Enhanced ID 4.8 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.49 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

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Datasheet: RFD12N06RLES , CS4N80A3HD , CS50N20ANH , CS540A3 , CS540A4 , IRLTS2242TR , CS540AR , VB1240 , 10N60 , CS5N20A4 , CS5N20FA9 , NCE4688 , NCE3400A , NCE3404 , NCE40P05Y , CS16N65FA9H , SI9424DY-T1-E3 .

History: STD20NF06L-1 | FS18SM-14A | TK100A06N1 | IRFL4315PBF | WMLL013N08HGS | WMK18N50C4 | R6035ENZ

Keywords - CS5N20A3 MOSFET datasheet

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