SI2306DS-T1 Todos los transistores

SI2306DS-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)

SMD Type MOSFET IC N-Channel 30-V (D-S) MOSFET SI2306DS (KI2306DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.02 +0.1 D 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1. Gate 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.057 @ VGS = 10 V 3.5 30 30 0.094 @ VGS = 4.5 V 2.8 - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306DS (A6)* *Marking Code Ordering Information Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter

SMD Type SMD Type IC SMD Type MOSFET N-Channel 30-V (D-S) MOSFET SI2306DS (KI2306DS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 3 RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 D 1.Base 1. Gate 2.Emitter 2. Source G 3. Drain 3.collector S Absolute Maximum Ratings Ta = 25 Parameter