SI2306DS-T1 - параметры транзистора MOSFET, его аналоги, datasheet

SI2306DS-T1 Datasheet (PDF)

..1. Size:884K cn vbsemi
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SI2306DS-T1www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

5.1. Size:1411K kexin
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SMD Type MOSFETICN-Channel 30-V (D-S) MOSFETSI2306DS (KI2306DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1 2+0.02+0.1D 0.15 -0.020.95 -0.1+0.11.9 -0.2G 1. Gate2. SourceS 3. DrainAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

6.1. Size:64K vishay
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Si2306DSVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.057 @ VGS = 10 V 3.530300.094 @ VGS = 4.5 V 2.8-TO-236(SOT-23)G 13 DS 2Top ViewSi2306DS (A6)**Marking CodeOrdering Information: Si2306DS-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter

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SMD TypeSMD Type ICSMD Type MOSFETN-Channel 30-V (D-S) MOSFETSI2306DS (KI2306DS)SOT-23Unit: mm+0.12.9 -0.1Features +0.10.4 -0.13 RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1D 1.Base1. Gate2.Emitter2. SourceG 3. Drain3.collectorS Absolute Maximum Ratings Ta = 25Parameter

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