SI2306DS-T1 PDF and Equivalents Search

 

SI2306DS-T1 Specs and Replacement

Type Designator: SI2306DS-T1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOT23

SI2306DS-T1 substitution

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SI2306DS-T1 datasheet

 ..1. Size:884K  cn vbsemi
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SI2306DS-T1

SI2306DS-T1 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)... See More ⇒

 5.1. Size:1411K  kexin
si2306ds-3.pdf pdf_icon

SI2306DS-T1

SMD Type MOSFET IC N-Channel 30-V (D-S) MOSFET SI2306DS (KI2306DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) = 30V RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.02 +0.1 D 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1. Gate 2. Source S 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒

 6.1. Size:64K  vishay
si2306ds.pdf pdf_icon

SI2306DS-T1

Si2306DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.057 @ VGS = 10 V 3.5 30 30 0.094 @ VGS = 4.5 V 2.8 - TO-236 (SOT-23) G 1 3 D S 2 Top View Si2306DS (A6)* *Marking Code Ordering Information Si2306DS-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter ... See More ⇒

 6.2. Size:1404K  kexin
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SI2306DS-T1

SMD Type SMD Type IC SMD Type MOSFET N-Channel 30-V (D-S) MOSFET SI2306DS (KI2306DS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 3 RDS(ON) 57m (VGS =-10V) RDS(ON) 94 m (VGS =-4.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 D 1.Base 1. Gate 2.Emitter 2. Source G 3. Drain 3.collector S Absolute Maximum Ratings Ta = 25 Parameter ... See More ⇒

Detailed specifications: CS16N06AE-G, CS12N06AE-G, RQK0301FG, RRQ030P03TR, RRR040P03TL, RFD16N05LSM9A, CS6N60A3D, CS6N60A3HDY, IRFP260, SI2308DS-T1-GE3, CS6N60A4H, NTMS4177PR, CS6N60A7H, CS6N60A8H, CS6N60FA9H, CS6N60FA9H-G, UT3N06G-AE3

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