SI2308DS-T1-GE3 Todos los transistores

SI2308DS-T1-GE3 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT2

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 +0.02 RDS(ON) 160m (VGS = 10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 220m (VGS = 4.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramete

Si2308DS Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.16 at VGS = 10 V 2.0 TrenchFET Power MOSFET 60 0.22 at VGS = 4.5 V 1.7 100 % Rg Tested TO-236 (SOT-23) G 1 3 D S 2 Top View Si2308DS (A8)* * Marking Code Ordering Information Si2308DS-T1 Si2308

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 +0.02 RDS(ON) 160m (VGS = 10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 220m (VGS = 4.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramete

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 RDS(ON) 160m (VGS = 10V) +0.05 0.95+0.1 -0.1 0.1 -0.01 RDS(ON) 220m (VGS = 4.5V) 1.9+0.1 -0.1 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Symb