SI2308DS-T1-GE3 PDF and Equivalents Search

 

SI2308DS-T1-GE3 Specs and Replacement

Type Designator: SI2308DS-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.09 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT23

SI2308DS-T1-GE3 substitution

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SI2308DS-T1-GE3 datasheet

 0.1. Size:861K  cn vbsemi
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SI2308DS-T1-GE3

SI2308DS-T1-GE3 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT2... See More ⇒

 5.1. Size:1328K  kexin
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SI2308DS-T1-GE3

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 +0.02 RDS(ON) 160m (VGS = 10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 220m (VGS = 4.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramete... See More ⇒

 6.1. Size:183K  vishay
si2308ds.pdf pdf_icon

SI2308DS-T1-GE3

Si2308DS Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.16 at VGS = 10 V 2.0 TrenchFET Power MOSFET 60 0.22 at VGS = 4.5 V 1.7 100 % Rg Tested TO-236 (SOT-23) G 1 3 D S 2 Top View Si2308DS (A8)* * Marking Code Ordering Information Si2308DS-T1 Si2308... See More ⇒

 6.2. Size:1329K  kexin
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SI2308DS-T1-GE3

SMD Type MOSFET N-Channel MOSFET SI2308DS (KI2308DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 60V ID = 2 A (VGS = 10V) 1 2 +0.02 RDS(ON) 160m (VGS = 10V) +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 220m (VGS = 4.5V) 1. Gate 2. Source 3. Drain G 1 3 D S 2 Absolute Maximum Ratings Ta = 25 Paramete... See More ⇒

Detailed specifications: CS12N06AE-G, RQK0301FG, RRQ030P03TR, RRR040P03TL, RFD16N05LSM9A, CS6N60A3D, CS6N60A3HDY, SI2306DS-T1, 4435, CS6N60A4H, NTMS4177PR, CS6N60A7H, CS6N60A8H, CS6N60FA9H, CS6N60FA9H-G, UT3N06G-AE3, CS6N70A3D1-G

Keywords - SI2308DS-T1-GE3 MOSFET specs

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