SI4559EY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4559EY
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET SI4559EY

SI4559EY Datasheet (PDF)

..1. Size:236K vishay
si4559ey.pdf

Si4559EYVishay SiliconixN- and P-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.055 at VGS = 10 V 4.5N-Channel 60 TrenchFET Power MOSFETs0.075 at VGS = 4.5 V 3.9 175 C Maximum Junction Temperature0.120 at VGS = - 10 V 3.1 Compliant to RoHS Direct

..2. Size:1565K cn vbsemi
si4559ey.pdf

SI4559EYwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS

8.1. Size:271K vishay
si4559ady.pdf

Si4559ADYVishay SiliconixN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.058 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.072 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.120 at VGS = - 10 V - 3.9APPLICATIONSP-Channel - 60 8 nC0.150

9.1. Size:288K vishay
si4554dy.pdf

Si4554DYVishay SiliconixN- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.024 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 40 0.026 at VGS = 8 V 8e 6.5 Compliant to RoHS Directive 2002/95/EC0.027 at VGS = 4.5 V 80.027

9.2. Size:73K vishay
si4558dy.pdf

Si4558DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.040 @ VGS = 10 V "6N-Channel 30N-Channel 300.060 @ VGS = 4.5 V "4.80.040 @ VGS = 10 V "6P-Channel 30P-Channel 300.070 @ VGS = 4.5 V "4.4S2SO-8G2S1 1 D8G1 2 D7DS2 3 D6G2 4 D5G1Top ViewS1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS

9.3. Size:1677K kexin
si4558dy.pdf

SMD Type MOSFETComplementary Power Trench MOSFET SI4558DY (KI4558DY)SOP-8 Features N-ChannelVDS=30V ID=6A RDS(ON) 40m (VGS = 10V) RDS(ON) 60m (VGS = 4.5V)1.50 0.15 P-ChannelVDS=-30V ID=-6A RDS(ON) 40m (VGS =-10V)1 Source1 5 Drain RDS(ON) 70m (VGS =-4.5V)6 Drain2 Gate17 Drain3 Source28 Drain4 Gate2DS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NP90N04VUG

Liste

Recientemente añadidas las descripciónes de los transistores: