SI4559EY Todos los transistores

 ..1. Size:236K  vishay
 si4559ey.pdf

Si4559EY Vishay Siliconix N- and P-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.055 at VGS = 10 V 4.5 N-Channel 60 TrenchFET Power MOSFETs 0.075 at VGS = 4.5 V 3.9 175 C Maximum Junction Temperature 0.120 at VGS = - 10 V 3.1 Compliant to RoHS Direct

 ..2. Size:1565K  cn vbsemi
 si4559ey.pdf

SI4559EY www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS

 8.1. Size:271K  vishay
 si4559ady.pdf

Si4559ADY Vishay Siliconix N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.058 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.072 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.120 at VGS = - 10 V - 3.9 APPLICATIONS P-Channel - 60 8 nC 0.150

 9.1. Size:288K  vishay
 si4554dy.pdf

Si4554DY Vishay Siliconix N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.024 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 40 0.026 at VGS = 8 V 8e 6.5 Compliant to RoHS Directive 2002/95/EC 0.027 at VGS = 4.5 V 8 0.027

 9.2. Size:73K  vishay
 si4558dy.pdf

Si4558DY Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.040 @ VGS = 10 V "6 N-Channel 30 N-Channel 30 0.060 @ VGS = 4.5 V "4.8 0.040 @ VGS = 10 V "6 P-Channel 30 P-Channel 30 0.070 @ VGS = 4.5 V "4.4 S2 SO-8 G2 S1 1 D 8 G1 2 D 7 D S2 3 D 6 G2 4 D 5 G1 Top View S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS

 9.3. Size:1677K  kexin
 si4558dy.pdf

SMD Type MOSFET Complementary Power Trench MOSFET SI4558DY (KI4558DY) SOP-8 Features N-Channel VDS=30V ID=6A RDS(ON) 40m (VGS = 10V) RDS(ON) 60m (VGS = 4.5V) 1.50 0.15 P-Channel VDS=-30V ID=-6A RDS(ON) 40m (VGS =-10V) 1 Source1 5 Drain RDS(ON) 70m (VGS =-4.5V) 6 Drain 2 Gate1 7 Drain 3 Source2 8 Drain 4 Gate2 D S