All MOSFET. SI4559EY Datasheet

 

SI4559EY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4559EY
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SO8

 SI4559EY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4559EY Datasheet (PDF)

 ..1. Size:236K  vishay
 si4559ey.pdf

SI4559EY SI4559EY

Si4559EYVishay SiliconixN- and P-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.055 at VGS = 10 V 4.5N-Channel 60 TrenchFET Power MOSFETs0.075 at VGS = 4.5 V 3.9 175 C Maximum Junction Temperature0.120 at VGS = - 10 V 3.1 Compliant to RoHS Direct

 ..2. Size:1565K  cn vbsemi
 si4559ey.pdf

SI4559EY SI4559EY

SI4559EYwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS

 8.1. Size:271K  vishay
 si4559ady.pdf

SI4559EY SI4559EY

Si4559ADYVishay SiliconixN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.058 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.072 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.120 at VGS = - 10 V - 3.9APPLICATIONSP-Channel - 60 8 nC0.150

 9.1. Size:288K  vishay
 si4554dy.pdf

SI4559EY SI4559EY

Si4554DYVishay SiliconixN- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.024 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 40 0.026 at VGS = 8 V 8e 6.5 Compliant to RoHS Directive 2002/95/EC0.027 at VGS = 4.5 V 80.027

 9.2. Size:73K  vishay
 si4558dy.pdf

SI4559EY SI4559EY

Si4558DYVishay SiliconixN- and P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.040 @ VGS = 10 V "6N-Channel 30N-Channel 300.060 @ VGS = 4.5 V "4.80.040 @ VGS = 10 V "6P-Channel 30P-Channel 300.070 @ VGS = 4.5 V "4.4S2SO-8G2S1 1 D8G1 2 D7DS2 3 D6G2 4 D5G1Top ViewS1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS

 9.3. Size:1677K  kexin
 si4558dy.pdf

SI4559EY SI4559EY

SMD Type MOSFETComplementary Power Trench MOSFET SI4558DY (KI4558DY)SOP-8 Features N-ChannelVDS=30V ID=6A RDS(ON) 40m (VGS = 10V) RDS(ON) 60m (VGS = 4.5V)1.50 0.15 P-ChannelVDS=-30V ID=-6A RDS(ON) 40m (VGS =-10V)1 Source1 5 Drain RDS(ON) 70m (VGS =-4.5V)6 Drain2 Gate17 Drain3 Source28 Drain4 Gate2DS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP7NA40

 

 
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