CS6N90A8H Todos los transistores

 

CS6N90A8H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS6N90A8H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 111 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO220AB
 

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CS6N90A8H Datasheet (PDF)

 7.1. Size:609K  wuxi china
cs6n90arh-g.pdf pdf_icon

CS6N90A8H

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.1. Size:1185K  jilin sino
jcs6n90fa jcs6n90ba jcs6n90sa jcs6n90ca jcs6n90gda.pdf pdf_icon

CS6N90A8H

N RN-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS Package ID 6.0 A VDSS 900 V RdsonVgs=10V 3.0 -MAX Qg-Typ 24.0nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

 8.2. Size:1374K  jilin sino
jcs6n90ch jcs6n90fh jcs6n90b.pdf pdf_icon

CS6N90A8H

N RN-CHANNEL MOSFET JCS6N90H Package MAIN CHARACTERISTICS ID 6 A VDSS 900 V Rdson-max 3.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 8.3. Size:424K  crhj
cs6n90f a9h.pdf pdf_icon

CS6N90A8H

Silicon N-Channel Power MOSFET R CS6N90F A9H General Description VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Otros transistores... CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , SMC3407S , CS6N80A0H , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , P0903BDG , NCE2305A , NCE3007S , MTD6P10ET4 , MMSF7P03HDR2G , CS730A8H , SPN3400S23RG , CS730FA9H , CS730FA9RD .

History: 2SK4227JS | SRC60R017FBT4G

 

 
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