All MOSFET. CS6N90A8H Datasheet

 

CS6N90A8H Datasheet and Replacement


   Type Designator: CS6N90A8H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 111 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO220AB
 

 CS6N90A8H substitution

   - MOSFET ⓘ Cross-Reference Search

 

CS6N90A8H Datasheet (PDF)

 7.1. Size:609K  wuxi china
cs6n90arh-g.pdf pdf_icon

CS6N90A8H

Silicon N-Channel Power MOSFET R CS6N90 ARH-G General Description VDSS 900 V CS6N90 ARH-G, the silicon N-channel Enhanced ID 6 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.85 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 8.1. Size:1185K  jilin sino
jcs6n90fa jcs6n90ba jcs6n90sa jcs6n90ca jcs6n90gda.pdf pdf_icon

CS6N90A8H

N RN-CHANNEL MOSFET JCS6N90A MAIN CHARACTERISTICS Package ID 6.0 A VDSS 900 V RdsonVgs=10V 3.0 -MAX Qg-Typ 24.0nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

 8.2. Size:1374K  jilin sino
jcs6n90ch jcs6n90fh jcs6n90b.pdf pdf_icon

CS6N90A8H

N RN-CHANNEL MOSFET JCS6N90H Package MAIN CHARACTERISTICS ID 6 A VDSS 900 V Rdson-max 3.0 @Vgs=10V Qg-typ 14 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 8.3. Size:424K  crhj
cs6n90f a9h.pdf pdf_icon

CS6N90A8H

Silicon N-Channel Power MOSFET R CS6N90F A9H General Description VDSS 900 V CS6N90F A9H, the silicon N-channel Enhanced VDMOSFETs, ID 6 A PD(TC=25) 48 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 1.85 the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , SMC3407S , CS6N80A0H , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , P0903BDG , NCE2305A , NCE3007S , MTD6P10ET4 , MMSF7P03HDR2G , CS730A8H , SPN3400S23RG , CS730FA9H , CS730FA9RD .

History: WMM15N65F2 | FS18SM-14A | TK100A06N1 | IRFL4315PBF | WMLL013N08HGS | WMK18N50C4 | R6035ENZ

Keywords - CS6N90A8H MOSFET datasheet

 CS6N90A8H cross reference
 CS6N90A8H equivalent finder
 CS6N90A8H lookup
 CS6N90A8H substitution
 CS6N90A8H replacement

 

 
Back to Top

 


 
.