MMSF7P03HDR2G Todos los transistores

 ..1. Size:803K  cn vbsemi
 mmsf7p03hdr2g.pdf

MMSF7P03HDR2G www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 D

 2.1. Size:89K  onsemi
 mmsf7p03hd mmsf7p03hdr2.pdf

MMSF7P03HD Preferred Device Power MOSFET 7 A, 30 V, P-Channel SO-8 These miniature surface mount devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are DC-DC converters, and power http //onsemi.com management in portable and battery powered products such as computers, printers, cellular and cordless p

 3.1. Size:214K  motorola
 mmsf7p03hdrev2.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7P03HD/D Designer's Data Sheet MMSF7P03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS Single HDTMOS are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density TMOS process. 30 VOLTS HDTMOS devices a

 4.1. Size:219K  motorola
 mmsf7p03hd.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMSF7P03HD/D Designer's Data Sheet MMSF7P03HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS Single HDTMOS are an advanced series of power MOSFETs POWER MOSFET which utilize Motorola s High Cell Density TMOS process. 30 VOLTS HDTMOS devices a