MMSF7P03HDR2G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MMSF7P03HDR2G
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.042 Ohm
Тип корпуса: SO8
Аналог (замена) для MMSF7P03HDR2G
MMSF7P03HDR2G Datasheet (PDF)
mmsf7p03hdr2g.pdf

MMSF7P03HDR2Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5D
mmsf7p03hd mmsf7p03hdr2.pdf

MMSF7P03HDPreferred DevicePower MOSFET7 A, 30 V, P-Channel SO-8These miniature surface mount devices are designed for use in lowvoltage, high speed switching applications where power efficiency isimportant. Typical applications are DC-DC converters, and powerhttp://onsemi.commanagement in portable and battery powered products such ascomputers, printers, cellular and cordless p
mmsf7p03hdrev2.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSSingle HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process.30 VOLTSHDTMOS devices a
mmsf7p03hd.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSSingle HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process.30 VOLTSHDTMOS devices a
Другие MOSFET... CS6N80A0H , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , MTD6P10ET4 , SKD502T , CS730A8H , SPN3400S23RG , CS730FA9H , CS730FA9RD , CS740A0H , CS120N08A8 , SSC8033GS6 , SSC8035GS6 .
History: STFI13NM60N | 2SK1796 | SE10030A | TK100A10N1 | WMO07N65C4
History: STFI13NM60N | 2SK1796 | SE10030A | TK100A10N1 | WMO07N65C4



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