All MOSFET. MMSF7P03HDR2G Datasheet

 

MMSF7P03HDR2G Datasheet and Replacement


   Type Designator: MMSF7P03HDR2G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SO8
 

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MMSF7P03HDR2G Datasheet (PDF)

 ..1. Size:803K  cn vbsemi
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MMSF7P03HDR2G

MMSF7P03HDR2Gwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5D

 2.1. Size:89K  onsemi
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MMSF7P03HDR2G

MMSF7P03HDPreferred DevicePower MOSFET7 A, 30 V, P-Channel SO-8These miniature surface mount devices are designed for use in lowvoltage, high speed switching applications where power efficiency isimportant. Typical applications are DC-DC converters, and powerhttp://onsemi.commanagement in portable and battery powered products such ascomputers, printers, cellular and cordless p

 3.1. Size:214K  motorola
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MMSF7P03HDR2G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSSingle HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process.30 VOLTSHDTMOS devices a

 4.1. Size:219K  motorola
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MMSF7P03HDR2G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMSF7P03HD/DDesigner's Data SheetMMSF7P03HDMedium Power Surface Mount ProductsMotorola Preferred DeviceTMOS Single P-ChannelField Effect TransistorsSINGLE TMOSSingle HDTMOS are an advanced series of power MOSFETsPOWER MOSFETwhich utilize Motorolas High Cell Density TMOS process.30 VOLTSHDTMOS devices a

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Datasheet: CS6N80A0H , SI9945AEY-T1-E3 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , MTD6P10ET4 , SKD502T , CS730A8H , SPN3400S23RG , CS730FA9H , CS730FA9RD , CS740A0H , CS120N08A8 , SSC8033GS6 , SSC8035GS6 .

History: SSM5H01TU | IPI45N04S4L-08 | BSS806N | TPS1101Y | ISL9N308AD3ST | NCEP60ND30AG | HCA90R300

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