SI4850DY-T1 Todos los transistores

 

SI4850DY-T1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SI4850DY-T1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SO8

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SI4850DY-T1 Datasheet (PDF)

 ..1. Size:852K  cn vbsemi
si4850dy-t1.pdf

SI4850DY-T1
SI4850DY-T1

SI4850DY-T1www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCF

 8.1. Size:289K  vishay
si4850bdy.pdf

SI4850DY-T1
SI4850DY-T1

Si4850BDYwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET Gen IV power MOSFETD 5D 6 100 % Rg and UIS testedD 7 Material categorization:8for definitions of compliance please see www.vishay.com/doc?999124APPLICATIONS DG33 Synchronous rectification SS22SS11 Primary side switchS

 8.2. Size:243K  vishay
si4850ey.pdf

SI4850DY-T1
SI4850DY-T1

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

 8.3. Size:246K  vishay
si4850ey-t1 si4850ey.pdf

SI4850DY-T1
SI4850DY-T1

Si4850EYVishay SiliconixN-Channel Reduced Qg, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.022 at VGS = 10 V 8.5 TrenchFET Power MOSFETs600.031 at VGS = 4.5 V 7.2 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSO-8 SD1 8 SD2 7

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